Utkarsh Shashank successfully defended his PhD thesis, “Charge-to-spin conversion phenomena in ion-implanted Pt and quasi-two dimensional electron gas based heterostructures“.
Archives
Presentation @ The 4th international symposium on neuromorphic AI hardware
Mr Nakamura will give a talk on “Nonlinear dynamics of time dependent RF pumping in SOT devices for neuromorphic computing”.
Mr Feng will give a talk on “Reservoir computing with spin Hall oscillators at easy-cone state”.
Paper Publication
Our article “Room-Temperature Charge-to-Spin Conversion from Quasi-2D Electron Gas at SrTiO3-Based Interfaces” published in Advanced Optical Materials.
invited talk @IBMEC 2022
Prof. Fukuma will give a talk on “Engineering spin Hall effect by ion implantation“.
Mr Shashank will give a talk on “Intrinsic-extrinsic crossover of spin Hall effect in O and N-implanted Pt”
Paper Publication
Our article “Piezoelectric Strain Control of Terahertz Spin Current” published in Advanced Optical Materials.
invited talk @workshop on spin orbit torque materials and devices
Prof. Fukuma will give a talk on “Spin Hall materials fabricated by ion implantation in platinum“.
Presentation @ In-Materio Neuromorphic Computing
Mr Mathew will give a talk on “Evaluation of spin Hall oscillator in performing reservoir computing benchmark tasks”.
Mr Mohan will give a talk on “Reservoir computing with nonlinear dynamical oscillations of easy cone magnets”.
Paper Publication
Our article “Electric field induced parametric excitation of exchange magnons in a CoFeB/MgO junction” published in Physical Review Research.
Presentation @3rd international symposium on Neuromorphic AI Hardware
Mr Mathew and Mr Nakamura will give a talk on “Evaluation of memory capacity of spin Hall oscillator for physical reservoir computing“.
Mr Mohan and Mr Feng will give a talk on “Classification tasks using input driven nonlinear magnetization dynamics in spin Hall oscillator“.
Presentation @APS March Meeting 2022
Mr Shashank will give a talk on “Enhancement of spin Hall effect in O-implanted Pt by side jump scattering“.